Three-Terminal Graphene Negative Differential Resistance Devices
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- 作者：Yanqing Wu ; Damon B. Farmer ; Wenjuan Zhu ; Shu-Jen Han ; Christos D. Dimitrakopoulos ; Ageeth A. Bol ; Phaedon Avouris ; Yu-Ming Lin
- 刊名：ACS Nano
- 出版年：2012
- 出版时间：March 27, 2012
- 年：2012
- 卷：6
- 期：3
- 页码：2610-2616
- 全文大小：933K
- 年卷期：v.6,no.3(March 27, 2012)
- ISSN：1936-086X
文摘
A new mechanism for negative differential resistance (NDR) is discovered in three-terminal graphene devices based on a field-effect transistor configuration. This NDR effect is a universal phenomenon for graphene and is demonstrated in devices fabricated with different types of graphene materials and gate dielectrics. Operation of conventional NDR devices is usually based on quantum tunneling or intervalley carrier transfer, whereas the NDR behavior observed here is unique to the ambipolar behavior of zero-bandgap graphene and is associated with the competition between electron and hole conduction as the drain bias increases. These three terminal graphene NDR devices offer more operation flexibility than conventional two-terminal devices based on tunnel diodes, Gunn diodes, or molecular devices, and open up new opportunities for graphene in microwave to terahertz applications.