Networks of Semiconducting SWNTs: Contribution of Midgap Electronic States to the Electrical Transport

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• 作者：Mikhail E. Itkis ; Aron Pekker ; Xiaojuan Tian ; Elena Bekyarova ; Robert C. Haddon
• 刊名：Accounts of Chemical Research
• 出版年：2015
• 出版时间：August 18, 2015
• 年：2015
• 卷：48
• 期：8
• 页码：2270-2279
• 全文大小：767K
• ISSN：1520-4898

文摘

Single-walled carbon nanotube (SWNT) thin films provide a unique platform for the development of electronic and photonic devices because they combine the advantages of the outstanding physical properties of individual SWNTs with the capabilities of large area thin film manufacturing and patterning technologies. Flexible SWNT thin film based field-effect transistors, sensors, detectors, photovoltaic cells, and light emitting diodes have been already demonstrated, and SWNT thin film transparent, conductive coatings for large area displays and smart windows are under development. While chirally pure SWNTs are not yet commercially available, the marketing of semiconducting (SC) and metallic (MT) SWNTs has facilitated progress toward applications by making available materials of consistent electronic structure. Nevertheless the electrical transport properties of networks of separated SWNTs are inferior to those of individual SWNTs. In particular, for semiconducting SWNTs, which are the subject of this Account, the electrical transport drastically differs from the behavior of traditional semiconductors: for example, the bandgap of germanium (E = 0.66 eV) roughly matches that of individual SC-SWNTs of diameter 1.5 nm, but in the range 300鈥?00 K, the intrinsic carrier concentration in Ge decreases by more than 10 orders of magnitude while the conductivity of a typical SC-SWNT network decreases by less than a factor of 4. Clearly this weak modulation of the conductivity hinders the application of SC-SWNT films as field effect transistors and photodetectors, and it is the purpose of this Account to analyze the mechanism of the electrical transport leading to the unusually weak temperature dependence of the electrical conductivity of such networks. Extrinsic factors such as the contribution of residual amounts of MT-SWNTs arising from incomplete separation and doping of SWNTs are evaluated. However, the observed temperature dependence of the conductivity indicates the presence of midgap electronic states in the semiconducting SWNTs, which provide a source of low-energy excitations, which can contribute to hopping conductance along the nanotubes following fluctuation induced tunneling across the internanotube junctions, which together dominate the low temperature transport and limit the resistivity of the films. At high temperatures, the intrinsic carriers thermally activated across the bandgap as in a traditional semiconductor became available for band transport. The midgap states pin the Fermi level to the middle of the bandgap, and their origin is ascribed to defects in the SWNT walls. The presence of such midgap states has been reported in connection with scanning tunneling spectroscopy experiments, Coulomb blockade observations in low temperature electrical measurements, selective electrochemical deposition imaging, tip-enhanced Raman spectroscopy, high resolution photocurrent spectroscopy, and the modeling of the electronic density of states associated with various defects.