Tunable Multilevel Storage of Complementary Resistive Switching on Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering
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- 作者：Shih-Ming Lin ; Jiun-Yi Tseng ; Teng-Yu Su ; Yu-Chuan Shih ; Jian-Shiou Huang ; Chi-Hsin Huang ; Su-Jien Lin ; Yu-Lun Chueh
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2014
- 出版时间：October 22, 2014
- 年：2014
- 卷：6
- 期：20
- 页码：17686-17693
- 全文大小：578K
- ISSN：1944-8252
文摘
Tunable multilevel storage of complementary resistive switching (CRS) on single-step formation of ZnO/ZnWOx bilayer structure via interfacial engineering was demonstrated for the first time. In addition, the performance of the ZnO/ZnWOx-based CRS device with the voltage- and current-sweep modes was demonstrated and investigated in detail. The resistance switching behaviors of the ZnO/ZnWOx bilayer ReRAM with adjustable RESET-stop voltages was explained using an electrochemical redox reaction model whose electron-hopping activation energies of 28, 40, and 133 meV can be obtained from Arrhenius equation at RESET-stop voltages of 1.0, 1.3, and 1.5 V, respectively. In the case of the voltage-sweep operation on the ZnO-based CRS device, the maximum array numbers (N) of 9, 15, and 31 at RESET-stop voltages of 1.4, 1.5, and 1.6 V were estimated, while the maximum array numbers increase into 47, 63, and 105 at RESET-stop voltages of 2.0, 2.2, and 2.4 V, operated by the current-sweep mode, respectively. In addition, the endurance tests show a very stable multilevel operation at each RESET-stop voltage under the current-sweep mode.