Crystal-Plane Dependence of Critical Concentration for Nucleation on Hydrothermal ZnO Nanowires

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• 作者：Yong He ; Takeshi Yanagida ; Kazuki Nagashima ; Fuwei Zhuge ; Gang Meng ; Bo Xu ; Annop Klamchuen ; Sakon Rahong ; Masaki Kanai ; Xiaomin Li ; Masaru Suzuki ; Shoichi Kai ; Tomoji Kawai
• 刊名：The Journal of Physical Chemistry C
• 出版年：2013
• 出版时间：January 17, 2013
• 年：2013
• 卷：117
• 期：2
• 页码：1197-1203
• 全文大小：495K
• 年卷期：v.117,no.2(January 17, 2013)
• ISSN：1932-7455

文摘

Hydrothermal ZnO nanowires have shown great potential for various nanoscale device applications due to their fascinating properties and low-temperature processing. A preferential crystal growth of ZnO (0001) polar plane is essential and fundamental to realize the anisotropic nanowire growth. Here we demonstrate that a critical concentration for a nucleation strongly depends on a crystal plane, which plays an important role on an anisotropic growth of hydrothermal ZnO nanowires. We measure a growth rate of each crystal plane when varying a concentration of Zn ionic species by using a regular array structure. Selective anisotropic growth on (0001) plane emerges within a certain concentration range. Above the concentration range, a crystal growth on (101虆0) plane tends to simultaneously occur. This strong concentration dependence on the crystal plane is understood in terms of a critical concentration difference between (0001) plane and (101虆0) plane, which is related to the surface energy difference between the crystal planes.