Enhanced Field Emission Performance of Ga-Doped In2O3(ZnO)3 Superlattice Nanobelts

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• 作者：Lili Wu ; Quan Li ; Xitian Zhang ; Tianyou Zhai ; Yoshio Bando ; Dmitri Golberg
• 刊名：Journal of Physical Chemistry C
• 出版年：2011
• 出版时间：December 22, 2011
• 年：2011
• 卷：115
• 期：50
• 页码：24564-24568
• 全文大小：852K
• 年卷期：v.115,no.50(December 22, 2011)
• ISSN：1932-7455

文摘

Ga-doped In₂O₃(ZnO)₃ nanobelts were successfully fabricated via a simple chemical vapor deposition (CVD) process. The morphology, microstructure, and composition of the nanobelts were characterized by scanning electron microscopy, high resolution transmission electron microscopy, selected area electron diffraction, and X-ray photoelectron spectroscopy. The results confirm the formation of In₂O₃(ZnO)₃ superlattice nanobelts doped with Ga. The field-emission studies show a low turn-on electrical field, high field enhancement factor, and a good stability of the emission current. These results are valuable for the design, fabrication, and optimization of field emitters.