Flexible Organic/Inorganic Hybrid Field-Effect Transistors with High Performance and Operational Stability
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- 作者：Abhishek S. DahiyaCharles Opoku ; Guylaine Poulin-Vittrant ; Nicolas Camara ; Christophe Daumont ; Eric G. Barbagiovanni ; Giorgia Franzò ; Salvo MirabellaDaniel Alquier
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2017
- 出版时间：January 11, 2017
- 年：2017
- 卷：9
- 期：1
- 页码：573-584
- 全文大小：769K
- ISSN：1944-8252
文摘
The production of high-quality semiconducting nanostructures with optimized electrical, optical, and electromechanical properties is important for the advancement of next-generation technologies. In this context, we herein report on highly obliquely aligned single-crystalline zinc oxide nanosheets (ZnO NSs) grown via the vapor–liquid–solid approach using r-plane (01–12) sapphire as the template surface. The high structural and optical quality of as-grown ZnO NSs has been confirmed using high-resolution transmission electron microscopy and temperature-dependent photoluminescence, respectively. To assess the potential of our NSs as effective building materials in high-performance flexible electronics, we fabricate organic (parylene C)/inorganic (ZnO NS) hybrid field-effect transistor (FET) devices on flexible substrates using room-temperature assembly processes. Extraction of key FET performance parameters suggests that as-grown ZnO NSs can successfully function as excellent n-type semiconducting modules. Such devices are found to consistently show very high on-state currents (Ion) > 40 μA, high field-effect mobility (μeff) > 200 cm2/(V s), exceptionally high on/off current modulation ratio (Ion/off) of around 109, steep subthreshold swing (s-s) < 200 mV/decade, very low hysteresis, and negligible threshold voltage shifts with prolonged electrical stressing (up to 340 min). The present study delivers a concept of integrating high-quality ZnO NS as active semiconducting elements in flexible electronic circuits.