Amorphous Strontium Titanate Film as Gate Dielectric for Higher Performance and Low Voltage Operation of Transparent and Flexible Organic Field Effect Transistor
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- 作者：Sarita Yadav ; Subhasis Ghosh
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2016
- 出版时间：April 27, 2016
- 年：2016
- 卷：8
- 期：16
- 页码：10436-10442
- 全文大小：533K
- 年卷期：0
- ISSN：1944-8252
文摘
We report that the pervoskite material, strontium titanate (STO) can be used as a gate dielectric layer of flexible and low voltage organic field effect transistor (OFET). The crystallinity, dielectric constant, and surface morphology of STO films can be controlled by the engineering of the growth condition. Under optimized growth condition, amorphous films of STO show a much better gate dielectric compared to other gate dielectrics used to date, with very small leakage current density for flexible and low voltage (<5 V) OFETs. The amorphous STO film decreases the interface trap density at organic/dielectric interface substantially. Pentacene transistors with amorphous STO gate dielectric show high mobility of 2 cm2/(V s), on/off ratio of 106, subthreshold swing of 0.3 V/dec and low interface trap density. Similarly excellent performance has been obtained in copper phthalocyanine (CuPc) based OFETs with on/off ratio ∼105 and carrier mobility ∼5.9 × 10–2 cm2/(V s). Moreover, the operating voltage (∼5 V) has been reduced by more than one order of magnitude. It has been demonstrated that the low processing temperature of amorphous STO makes it the most suitable gate dielectric for flexible and transparent organic devices to operate under low voltage.