Solution-Processed, High-Speed, and High-Quantum-Efficiency Quantum Dot Infrared Photodetectors

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• 作者：Jianbo Gao ; Son C. Nguyen ; Noah D. Bronstein ; A. Paul Alivisatos
• 刊名：ACS Photonics
• 出版年：2016
• 出版时间：July 20, 2016
• 年：2016
• 卷：3
• 期：7
• 页码：1217-1222
• 全文大小：482K
• 年卷期：0
• ISSN：2330-4022

文摘

For over a decade, much effort has been focused on passivation of the high density of localized electronic trap states in colloidal semiconductor quantum dots (QDs), which lead to reduced performance in solar cell, light-emitting diode, laser, and photoconductor applications. However, here we take advantage of the naturally occurring high density of trap states to demonstrate solution-processed high-speed PbSe quantum dot near-infrared photodetectors. Carrier transport dynamics studies reveal multiple trapping and release transport dynamics in band tail states. A sandwich microstrip transmission line photodetector utilizing these QD films was fabricated to achieve high performance by allowing carriers to be swept to the electrodes before they fall into the band tail states. This device demonstrates external quantum efficiency, responsivity, and response time (full width at half-maximum) of 54%, 0.36 A/W, and 74 ps, respectively.