Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer

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• 作者：Yan Chen ; Xudong Wang ; Peng Wang ; Hai Huang ; Guangjian Wu ; Bobo Tian ; Zhenchen Hong ; Yutao Wang ; Shuo Sun ; Hong Shen ; Jianlu Wang ; Weida Hu ; Jinglan Sun ; Xiangjian Meng ; Junhao Chu
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：November 30, 2016
• 年：2016
• 卷：8
• 期：47
• 页码：32083-32088
• 全文大小：431K
• ISSN：1944-8252

文摘

Recently, new devices combining two-dimensional (2D) materials with ferroelectrics, have been a new hotspot for promising applications in electronics and optoelectronics. Here, we design a new type of FET using the 2D MoS₂ and poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) terpolymer ferroelectric relaxor. The devices exhibit excellent performance including a large on/off ratio) and an insignificant leakage current. Moreover, the hysteresis characteristics are effectively modulated for its ferroelectric properties at low temperature. Additionally, a broad range photoresponse (visible to 1.55 μm) and a high sensitivity (>300 A/W, λ = 450 nm) are achieved. These results indicate that ferroelectric relaxor can be applied into the high-performance 2D optoelectronic devices.