Sequential Chemical Bath Deposition of Cu2鈥?i>xSe/CdS Film by Suppressing Ion-Exchange Reaction
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- 作者：Gangri Cai ; Iseul Lim ; Deok Yeon Lee ; Nabeen K. Shrestha ; Joong Kee Lee ; Yoon-Chae Nah ; Wonjoo Lee ; Sung-Hwan Han
- 刊名：The Journal of Physical Chemistry B
- 出版年：2012
- 出版时间：June 21, 2012
- 年：2012
- 卷：116
- 期：24
- 页码：7176-7180
- 全文大小：284K
- 年卷期：v.116,no.24(June 21, 2012)
- ISSN：1520-5207
文摘
Chemical bath deposition is an attractive technique to form single- and multilayered metal oxide/chalcogenide films on electrode surfaces. However, the occurrence of desorption and/or ion-exchange reaction during subsequent chemical bath deposition has so far limited preparation of multilayered metal oxide/chalcogenide films. In this paper, we report a method to prevent desorption and ion-exchange reaction of metal oxide/chalcogenide on electrode surfaces using a polyelectrolyte multilayer during sequential chemical bath deposition. By controlling the ion permeability of the polyelectrolyte multilayer, Cu2鈥?i>xSe film was successfully deposited on the CdS film. The Cu2鈥?i>xSe/CdS film is confirmed by UV鈥搗is absorption spectroscopy, scanning electron microscopy, energy dispersive X-ray analysis, and X-ray powder diffractometer. Furthermore, the Cu2鈥?i>xSe/CdS films were investigated as photoinduced charge transfer devices which showed photocurrents of 0.22 mA/cm2 under illumination (I = 100 mW/cm2).