In-Plane Intermolecular Interaction Assisted Assembly and Modified Electronic States of Metallofullerene Gd@C82

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• 作者：Jian Chen ; Zhihui Qin ; Jinbo Pan ; Min Huang ; Shixuan Du ; Gengyu Cao
• 刊名：Langmuir
• 出版年：2015
• 出版时间：October 27, 2015
• 年：2015
• 卷：31
• 期：42
• 页码：11438-11442
• 全文大小：323K
• ISSN：1520-5827

文摘

Orientational configuration and electronic states of Gd@C₈₂ bonding to Cu(111) have been thoroughly investigated by low-temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) and differential conductance mapping complemented by first-principles calculations. We clarify that individual Gd@C₈₂ energetically adopts tilting adsorption configuration with the scanning tunneling spectroscopy (STS) states readily assigned to the C₈₂ cage/Cu(111) hybrid states and the Gd/cage hybrid states, respectively. Moreover, upon assembling and sufficient thermal activation, Gd@C₈₂ fullerenes are inclined to restore the energetically favored tilting orientational configuration similar to an individual one. This suggests the feasibility of high-level integration of single-Gd@C₈₂ based moletronic device with the performances almost unchanged by two-dimensional arrangement. Furthermore, by rationalizing the inter-Gd@C₈₂ interaction induced slight energy offset of the electronic states, we qualitatively confirm the shown electronic hybrid states as Cu(111)-, C₈₂ cage- and Gd-dominant hybrid states, respectively.