Room-Temperature, Low-Barrier Boron Doping of Graphene

详细信息    查看全文

• 作者：Lida Pan ; Yande Que ; Hui Chen ; Dongfei Wang ; Jun Li ; Chengmin Shen ; Wende Xiao ; Shixuan Du ; Hongjun Gao ; Sokrates T. Pantelides
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：October 14, 2015
• 年：2015
• 卷：15
• 期：10
• 页码：6464-6468
• 全文大小：333K
• ISSN：1530-6992

文摘

Doping graphene with boron has been difficult because of high reaction barriers. Here, we describe a low-energy reaction route derived from first-principles calculations and validated by experiments. We find that a boron atom on graphene on a ruthenium(0001) substrate can replace a carbon by pushing it through, with substrate attraction helping to reduce the barrier to only 0.1 eV, implying that the doping can take place at room temperature. High-quality graphene is grown on a Ru(0001) surface and exposed to B₂H₆. Scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy confirmed that boron is indeed incorporated substitutionally without disturbing the graphene lattice.