Influence of Gas Ambient on Charge Writing at the LaAlO3/SrTiO3 Heterointerface

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• 作者：Haeri Kim ; Seon Young Moon ; Shin-Ik Kim ; Seung-Hyub Baek ; Ho Won Jang ; Dong-Wook Kim
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2014
• 出版时间：August 27, 2014
• 年：2014
• 卷：6
• 期：16
• 页码：14037-14042
• 全文大小：318K
• ISSN：1944-8252

文摘

We investigated the influences of charge writing on the surface work function (W) and sheet resistance (R) of the LaAlO₃/SrTiO₃ (LAO/STO) heterointerface in several gas environments: H₂(2%)/N₂(98%), air, N₂, and O₂. The decrease in W and R due to charge writing was much larger in air (螖W = 鈭?.45 eV and 螖R = 鈭?0 k惟/S) than in O₂ (螖W = 鈭?.21 eV and 螖R = 鈭?9 k惟/S). The reduced R could be maintained more than 100 h in H₂/N₂. Such distinct behaviors were quantitatively discussed, based on the proposed charge-writing mechanisms. Such analyses showed how several processes, such as carrier transfer via surface adsorbates, surface redox, electronic state modification, and electrochemical surface reactions, contributed to charge writing in each gas.

Keywords:

LaAlO₃/SrTiO₃; carrier density; ambient effect; charge writing