Templating C60 on MoS2 Nanosheets for 2D Hybrid van der Waals p–n Nanoheterojunctions

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• 作者：Runfeng Chen ; Cheng Lin ; Huan Yu ; Yuting Tang ; Chao Song ; Lihui Yuwen ; Hai Li ; Xiaoji Xie ; Lianhui Wang ; Wei Huang
• 刊名：Chemistry of Materials
• 出版年：2016
• 出版时间：June 28, 2016
• 年：2016
• 卷：28
• 期：12
• 页码：4300-4306
• 全文大小：448K
• 年卷期：0
• ISSN：1520-5002

文摘

C₆₀ and single-layer MoS₂ nanocomposites were facilely prepared via a combined solvent transfer and surface deposition (STSD) method by templating C₆₀ aggregates on 2D MoS₂ nanosheets to construct hybrid van der Waals heterojunctions. The electronic property of the hybrid nanomaterials was investigated in a direct charge transport diode device configuration of ITO/C₆₀–MoS₂ nanocomposites/Al; rewritable nonvolatile resistive switching with low SET/RESET voltage (∼3 V), high ON/OFF resistance ratio (∼4 × 10³), and superior electrical bistability (>10⁴ s) of a flash memory behavior was observed. This particular electrical property of C₆₀–MoS₂ nanocomposites, not possessed by either C₆₀ or MoS₂ nanosheets, was supposed to be due to the efficiently established C₆₀/MoS₂ p–n nanojunction, which controls the electron tunneling via junction barriers modulated by electric-field-induced polarization. Thus, our 2D templating method through STSD is promising to massively allocate van der Waals p–n heterojunctions in 2D nanocomposites, opening a window for important insights into the charge transport across the interface of organic/2D-semiconductors.