Impact of Annealing-Induced Intermixing on the Electronic Level Alignment at the In2S3/Cu(In,Ga)Se2 Thin-Film Solar Cell Interface

详细信息    查看全文

• 作者：Marcus B?r ; Nicolas Barreau ; Fran?ois Couzinié-Devy ; Lothar Weinhardt ; Regan G. Wilks ; John Kessler ; Clemens Heske
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：January 27, 2016
• 年：2016
• 卷：8
• 期：3
• 页码：2120-2124
• 全文大小：287K
• ISSN：1944-8252

文摘

The interface between a nominal In₂S₃ buffer and a Cu(In,Ga)Se₂ (CIGSe) thin-film solar cell absorber was investigated by direct and inverse photoemission to determine the interfacial electronic structure. On the basis of a previously reported heavy intermixing at the interface (S diffuses into the absorber; Cu diffuses into the buffer; and Na diffuses through it), we determine here the band alignment at the interface. The results suggest that the pronounced intermixing at the In₂S₃/CIGSe interface leads to a favorable electronic band alignment, necessary for high-efficiency solar cell devices.