Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics

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• 作者：Zhenxing Wang ; Huilong Xu ; Zhiyong Zhang ; Sheng Wang ; Li Ding ; Qingsheng Zeng ; Leijing Yang ; Tian Pei ; Xuelei Liang ; Min Gao ; Lian-Mao Peng
• 刊名：Nano Letters
• 出版年：2010
• 出版时间：June 9, 2010
• 年：2010
• 卷：10
• 期：6
• 页码：2024-2030
• 全文大小：488K
• 年卷期：v.10,no.6(June 9, 2010)
• ISSN：1530-6992

文摘

High-quality yttrium oxide (Y₂O₃) is investigated as an ideal high-κ gate dielectric for carbon-based electronics through a simple and cheap process. Utilizing the excellent wetting behavior of yttrium on sp² carbon framework, ultrathin (about few nm) and uniform Y₂O₃ layers have been directly grown on the surfaces of carbon nanotube (CNT) and graphene without using noncovalent functionalization layers or introducing large structural distortion and damage. A top-gate CNT field-effect transistor (FET) adopting 5 nm Y₂O₃ layer as its top-gate dielectric shows excellent device characteristics, including an ideal subthreshold swing of 60 mV/decade (up to the theoretical limit of an ideal FET at room temperature). The high electrical quality Y₂O₃ dielectric layer has also been integrated into a graphene FET as its top-gate dielectric with a capacitance of up to 1200 nF/cm², showing an improvement on the gate efficiency and on state transconductance of over 100 times when compared with that of its back-gate counterpart.