Boosting Responsivity of Organic–Metal Oxynitride Hybrid Heterointerface Phototransistor

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• 作者：You Seung Rim ; Kyung-Chul Ok ; Yang Michael Yang ; Huajun Chen ; Sang-Hoon Bae ; Chen Wang ; Yu Huang ; Jin-Seong Park ; Yang Yang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：June 15, 2016
• 年：2016
• 卷：8
• 期：23
• 页码：14665-14670
• 全文大小：451K
• 年卷期：0
• ISSN：1944-8252

文摘

Amorphous metal oxides are attractive materials for various sensor applications, because of high electrical performance and easy processing. However, low absorption coefficient, slow photoresponse, and persistent photoconductivity of amorphous metal oxide films from the origin of deep-level defects are obstacles to their use as photonic applications. Here, we demonstrate ultrahigh photoresponsivity of organic–inorganic hybrid phototransistors featuring bulk heterojunction polymers and low-bandgap zinc oxynitride. Spontaneous formation of ultrathin zinc oxide on the surface of zinc oxynitride films could make an effective band-alignment for electron transfer from the dissociation of excitons in the bulk heterojunction, while holes were blocked by the deep highest occupied molecular orbital level of zinc oxide. These hybrid structure-based phototransistors are ultrasensitive to broad-bandwidth photons in ultraviolet to near-infrared regions. The detectivity and a linear dynamic range exceeded 10¹² Jones and 122.3 dB, respectively.