Optoelectrical Molybdenum Disulfide (MoS2)鈥擣erroelectric Memories

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• 作者：Alexey Lipatov ; Pankaj Sharma ; Alexei Gruverman ; Alexander Sinitskii
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：August 25, 2015
• 年：2015
• 卷：9
• 期：8
• 页码：8089-8098
• 全文大小：675K
• ISSN：1936-086X

文摘

In this study, we fabricated and tested electronic and memory properties of field-effect transistors (FETs) based on monolayer or few-layer molybdenum disulfide (MoS₂) on a lead zirconium titanate (Pb(Zr,Ti)O₃, PZT) substrate that was used as a gate dielectric. MoS₂鈥揚ZT FETs exhibit a large hysteresis of electronic transport with high ON/OFF ratios. We demonstrate that the interplay of polarization and interfacial phenomena strongly affects the electronic behavior and memory characteristics of MoS₂鈥揚ZT FETs. We further demonstrate that MoS₂鈥揚ZT memories have a number of advantages and unique features compared to their graphene-based counterparts as well as commercial ferroelectric random-access memories (FeRAMs), such as nondestructive data readout, low operation voltage, wide memory window and the possibility to write and erase them both electrically and optically. This dual optoelectrical operation of these memories can simplify the device architecture and offer additional practical functionalities, such as an instant optical erase of large data arrays that is unavailable for many conventional memories.