Electropolymerization of Poly(phenylene oxide) on Graphene as a Top-Gate Dielectric

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• 作者：Alexey Lipatov ; Benjamin B. Wymore ; Alexandra Fursina ; Timothy H. Vo ; Alexander Sinitskii ; Jody G. Redepenning
• 刊名：Chemistry of Materials
• 出版年：2015
• 出版时间：January 13, 2015
• 年：2015
• 卷：27
• 期：1
• 页码：157-165
• 全文大小：629K
• ISSN：1520-5002

文摘

Site-directed electrochemical deposition of pinhole free, low-魏 dielectric thin films on graphene is described for the first time. Specifically, we demonstrate the heterogeneous electrochemical polymerization of phenol to form thin (3鈥? nm) layers of poly(phenylene oxide) (PPO) on monolayer graphene samples prepared by micromechanical exfoliation and chemical vapor deposition growth. We demonstrate the reliability of depositing PPO films simultaneously on a large number of devices, and selected individual graphene flakes/devices. The performance of top-gated field effect transistor devices described herein demonstrates the utility of electrodeposited PPO films as a top-gate dielectric.