Bismuth-Catalyzed and Doped Silicon Nanowires for One-Pump-Down Fabrication of Radial Junction Solar Cells

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• 作者：Linwei Yu ; Franck Fortuna ; Benedict O鈥橠onnell ; Taewoo Jeon ; Martin Foldyna ; Gennaro Picardi ; Pere Roca i Cabarrocas
• 刊名：Nano Letters
• 出版年：2012
• 出版时间：August 8, 2012
• 年：2012
• 卷：12
• 期：8
• 页码：4153-4158
• 全文大小：494K
• 年卷期：v.12,no.8(August 8, 2012)
• ISSN：1530-6992

文摘

Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor鈥搇iquid鈥搒olid (VLS) mode, to fabricate amorphous Si radial n鈥搃鈥損 junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V_oc = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J_sc = 11.23 mA/cm². More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells.

Keywords:

Radial junction solar cell; silicon nanowire; vapor鈭抣iquid鈭抯olid growth; bismuth catalyzed growth; bismuth doping; PECVD thin film deposition