Room-Temperature Terahertz Detectors Based on Semiconductor Nanowire Field-Effect Transistors
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- 作者：Miriam S. Vitiello ; Dominique Coquillat ; Leonardo Viti ; Daniele Ercolani ; Frederic Teppe ; Alessandro Pitanti ; Fabio Beltram ; Lucia Sorba ; Wojciech Knap ; Alessandro Tredicucci
- 刊名：Nano Letters
- 出版年：2012
- 出版时间：January 11, 2012
- 年：2012
- 卷：12
- 期：1
- 页码：96-101
- 全文大小：261K
- 年卷期：v.12,no.1(January 11, 2012)
- ISSN：1530-6992
文摘
The growth of semiconductor nanowires (NWs) has recently opened new paths to silicon integration of device families such as light-emitting diodes, high-efficiency photovoltaics, or high-responsivity photodetectors. It is also offering a wealth of new approaches for the development of a future generation of nanoelectronic devices. Here we demonstrate that semiconductor nanowires can also be used as building blocks for the realization of high-sensitivity terahertz detectors based on a 1D field-effect transistor configuration. In order to take advantage of the low effective mass and high mobilities achievable in III鈥揤 compounds, we have used InAs nanowires, grown by vapor-phase epitaxy, and properly doped with selenium to control the charge density and to optimize source鈥揹rain and contact resistance. The detection mechanism exploits the nonlinearity of the transfer characteristics: the terahertz radiation field is fed at the gate-source electrodes with wide band antennas, and the rectified signal is then read at the output in the form of a DC drain voltage. Significant responsivity values (>1 V/W) at 0.3 THz have been obtained with noise equivalent powers (NEP) < 2 脳 10鈥? W/(Hz)1/2 at room temperature. The large existing margins for technology improvements, the scalability to higher frequencies, and the possibility of realizing multipixel arrays, make these devices highly competitive as a future solution for terahertz detection.