Enhancement of Trap-Assisted Green Electroluminescence Efficiency in ZnO/SiO2/Si Nanowire Light-Emitting Diodes on Bendable Substrates by Piezophototronic Effect

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• 作者：Kwangeun Kim ; Youngin Jeon ; Kyoungah Cho ; Sangsig Kim
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：February 3, 2016
• 年：2016
• 卷：8
• 期：4
• 页码：2764-2773
• 全文大小：609K
• ISSN：1944-8252

文摘

The trap-assisted green electroluminescence (EL) efficiency of a light-emitting diode (LED) consisting of a ZnO nanowire (NW), a SiO<sub>2sub> layer, and a Si NW on a bendable substrate is enhanced by piezophototronic effect. The green EL originates from radiative recombination through deep-level defects such as interstitial zinc, interstitial oxygen, oxygen antisite, and zinc vacancy in the component ZnO NW. The efficiency of the trap-assisted green EL is enhanced by a piezophototronic factor of 2.79 under a strain of 0.006%. The piezoelectric field built up inside the component ZnO NW improves the recombination rate of the electron–hole pairs thereby enhancing the efficiency of the trap-assisted green EL.