用户名: 密码: 验证码:
In Situ Conductance Studies of Two-Component C60-Pd Polymer
详细信息    查看全文
文摘
Under well-controlled electrochemical conditions, C60-Pd polymer was deposited at the electrode surface in tetra-n-butylammonium acetonitrile/toluene solution. The electrochemical properties and conductivity of this material were studied in acetonitrile containing different tetraalkylammonium perchlorates as supporting electrolytes. The film exhibits n-doped properties. The electrochemical quartz crystal microbalance results reveal that the polymeric film is doped with cations of the supporting electrolyte during switching between the neutral and reduced states. Such a transition also results in a sharp increase of the film conductivity. The C60-Pd doping level and, therefore, charge carrier density depend on the size of the counterions incorporated into the polymeric structure during its reduction. The conductivity of the C60-Pd polymeric film also depends on the size of the doping cation. The negatively charged mobile carriers generated during the film reduction are responsible for the film conductivity. The charge propagation through the polymeric film can be quantitatively described by the electron-hopping model. The specific conductivity of C60-Pd and the electron diffusion coefficient are of the same order of magnitude as the values reported for typical p-doped conducting polymers. The conductivity properties of the composite of C60-Pd polymer and palladium nanoparticles were also investigated. Metallic nanoparticles participate in charge transport within the film in the potential range of the polymer neutral state. Therefore, the C60-Pd/Pd composite exhibits a large potential window of the conductivity state. The conductivity components related to the palladium nanoparticle involved in the charge transfer process and the electron hopping between differently charged fullerene centers were separated and determined.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700