Effects of Hydrogen Partial Pressure in the Annealing Process on Graphene Growth

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• 作者：Da Hee Jung ; Cheong Kang ; Minjung Kim ; Hyeonsik Cheong ; Hangil Lee ; Jin Seok Lee
• 刊名：Journal of Physical Chemistry C
• 出版年：2014
• 出版时间：February 20, 2014
• 年：2014
• 卷：118
• 期：7
• 页码：3574-3580
• 全文大小：414K
• ISSN：1932-7455

文摘

Graphene domains with different sizes and densities were successfully grown on Cu foils with use of a chemical vapor deposition method. We investigated the effects of volume ratios of argon to hydrogen during the annealing process on graphene growth, especially as a function of hydrogen partial pressure. The mean size and density of graphene domains increased with an increase in hydrogen partial pressure during the annealing time. In addition, we found that annealing with use of only hydrogen gas resulted in snowflake-shaped carbon aggregates. Energy-dispersive X-ray spectroscopy (EDX) and high-resolution photoemission spectroscopy (HRPES) revealed that the snowflake-shaped carbon aggregates have stacked sp² carbon configuration. With these observations, we demonstrate the key reaction details for each growth process and a proposed growth mechanism as a function of the partial pressure of H₂ during the annealing process.