Organic One-Transistor-Type Nonvolatile Memory Gated with Thin Ionic Liquid-Polymer Film for Low Voltage Operation
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- 作者：Sun Kak Hwang ; Tae Joon Park ; Kang Lib Kim ; Suk Man Cho ; Beom Jin Jeong ; Cheolmin Park
- 刊名：ACS Applied Materials & Interfaces
- 出版年：2014
- 出版时间：November 26, 2014
- 年：2014
- 卷：6
- 期：22
- 页码：20179-20187
- 全文大小：625K
- ISSN：1944-8252
文摘
As one of the most emerging next-generation nonvolatile memories, one-transistor (1T)-type nonvolatile memories are of great attention due to their excellent memory performance and simple device architecture suitable for high density memory arrays. In particular, organic 1T-type memories containing both organic semiconductors and insulators are further beneficial because of their mechanical flexibility with low cost fabrication. Here, we demonstrate a new flexible organic 1T-type memory operating at low voltage. The low voltage operation of a memory less than 10 V was obtained by employing a polymer gate insulator solution blended with ionic liquid as a charge storage layer. Ionic liquid homogeneously dissolved in a thin poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film gave rise to low voltage operation of a device due to its high capacitance. Simultaneously, stable charge trapping of either anions or cations efficiently occurred in the polymer matrix, dependent upon gate bias. Optimization of ionic liquid in PVDF-TrFE thus led to an air-stable and mechanically flexible organic 1T-type nonvolatile memory operating at programming voltage of 卤7 V with large ON/OFF current margin of approximately 103, reliable time-dependent data retention of more than 104 seconds, and write/read endurance cycles of 80.