Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers

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• 作者：Yongji Gong ; Zhong Lin ; Gonglan Ye ; Gang Shi ; Simin Feng ; Yu Lei ; Ana Laura El铆as ; Nestor Perea-Lopez ; Robert Vajtai ; Humberto Terrones ; Zheng Liu ; Mauricio Terrones ; Pulickel M. Ajayan
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：December 22, 2015
• 年：2015
• 卷：9
• 期：12
• 页码：11658-11666
• 全文大小：638K
• ISSN：1936-086X

文摘

Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS₂ and WS₂ monolayers. In this work, we reduced the synthesis temperature by 200 掳C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS₂ and WS₂ monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.