High-Efficiency, Low Turn-on Voltage Blue-Violet Quantum-Dot-Based Light-Emitting Diodes

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• 作者：Huaibin Shen ; Weiran Cao ; Nathan T. Shewmon ; Chenchen Yang ; Lin Song Li ; Jiangeng Xue
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：February 11, 2015
• 年：2015
• 卷：15
• 期：2
• 页码：1211-1216
• 全文大小：357K
• ISSN：1530-6992

文摘

We report high-efficiency blue-violet quantum-dot-based light-emitting diodes (QD-LEDs) by using high quantum yield ZnCdS/ZnS graded core鈥搒hell QDs with proper surface ligands. Replacing the oleic acid ligands on the as-synthesized QDs with shorter 1-octanethiol ligands is found to cause a 2-fold increase in the electron mobility within the QD film. Such a ligand exchange also results in an even greater increase in hole injection into the QD layer, thus improving the overall charge balance in the LEDs and yielding a 70% increase in quantum efficiency. Using 1-octanethiol capped QDs, we have obtained a maximum luminance (L) of 7600 cd/m² and a maximum external quantum efficiency (畏_EQE) of (10.3 卤 0.9)% (with the highest at 12.2%) for QD-LEDs devices with an electroluminescence peak at 443 nm. Similar quantum efficiencies are also obtained for other blue/violet QD-LEDs with peak emission at 455 and 433 nm. To the best of our knowledge, this is the first report of blue QD-LEDs with 畏_EQE > 10%. Combined with the low turn-on voltage of 鈭?.6 V, these blue-violet ZnCdS/ZnS QD-LEDs show great promise for use in next-generation full-color displays.