Graphene Quantum Dot Layers with Energy-Down-Shift Effect on Crystalline-Silicon Solar Cells

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• 作者：Kyung D. Lee ; Myung J. Park ; Do-Yeon Kim ; Soo M. Kim ; Byungjun Kang ; Seongtak Kim ; Hyunho Kim ; Hae-Seok Lee ; Yoonmook Kang ; Sam S. Yoon ; Byung H. Hong ; Donghwan Kim
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：September 2, 2015
• 年：2015
• 卷：7
• 期：34
• 页码：19043-19049
• 全文大小：439K
• ISSN：1944-8252

文摘

Graphene quantum dot (GQD) layers were deposited as an energy-down-shift layer on crystalline-silicon solar cell surfaces by kinetic spraying of GQD suspensions. A supersonic air jet was used to accelerate the GQDs onto the surfaces. Here, we report the coating results on a silicon substrate and the GQDs鈥?application as an energy-down-shift layer in crystalline-silicon solar cells, which enhanced the power conversion efficiency (PCE). GQD layers deposited at nozzle scan speeds of 40, 30, 20, and 10 mm/s were evaluated after they were used to fabricate crystalline-silicon solar cells; the results indicate that GQDs play an important role in increasing the optical absorptivity of the cells. The short-circuit current density was enhanced by about 2.94% (0.9 mA/cm²) at 30 mm/s. Compared to a reference device without a GQD energy-down-shift layer, the PCE of p-type silicon solar cells was improved by 2.7% (0.4 percentage points).