Vapor鈥揝olid Growth of Few-Layer Graphene Using Radio Frequency Sputtering Deposition and Its Application on Field Emission
详细信息 查看全文
- 作者：Jian-hua Deng ; Rui-ting Zheng ; Yong Zhao ; Guo-an Cheng
- 刊名：ACS Nano
- 出版年：2012
- 出版时间：May 22, 2012
- 年：2012
- 卷：6
- 期：5
- 页码：3727-3733
- 全文大小：468K
- 年卷期：v.6,no.5(May 22, 2012)
- ISSN：1936-086X
文摘
The carbon nanotube (CNT) and graphene hybrid is an attractive candidate for field emission (FE) because of its unique properties, such as high conductivity, large aspect ratio of CNT, and numerous sharp edges of graphene. We report here a vapor鈥搒olid growth of few-layer graphene (FLG, less than 10 layers) on CNTs (FLG/CNT) and Si wafers using a radio frequency sputtering deposition system. Based on SEM, TEM, and Raman spectrum analyses, a defect nucleation mechanism of the FLG growth was proposed. The FE measurements indicate that the FLG/CNT hybrids have low turn-on (0.956 V/渭m) and threshold fields (1.497 V/渭m), large field enhancement factor (4398), and good stability. Excellent FE properties of the FLG/CNT hybrids make them attractive candidates as high-performance field emitters.