Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio

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• 作者：Si Young Lee ; Dinh Loc Duong ; Quoc An Vu ; Youngjo Jin ; Philip Kim ; Young Hee Lee
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：September 22, 2015
• 年：2015
• 卷：9
• 期：9
• 页码：9034-9042
• 全文大小：607K
• ISSN：1936-086X

文摘

We report a chemically conjugated bilayer graphene field effect transistor demonstrating a high on/off ratio without significant degradation of the on-current and mobility. This was realized by introducing environmentally stable benzyl viologen as an electron-donating group and atmospheric dopants as an electron-withdrawing group, which were used as dopants for the bottom and top of the bilayer graphene, respectively. A high mobility of 鈭?100 cm² V^鈥? s^鈥? with a high on/off ratio of 76.1 was obtained at room temperature without significant degradation of the on-current. This is attributed to low charge scattering due to physisorbed dopants without provoking sp³ structural disorders. By utilizing our band-gap-opened bilayer graphene, excellent nonvolatile memory switching behavior was demonstrated with a clear program/erase state by applying pulse gate bias. The initial program/erase current ratio of 鈭?4.5 was still retained at higher than 10 even after 10⁴ s.