Continuous-Wave Optically Pumped 1.55 μm InAs/InAlGaAs Quantum Dot Microdisk Lasers Epitaxially Grown on Silicon

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• 作者：Bei ShiSi Zhu ; Qiang Li ; Yating Wan ; Evelyn L. Hu ; Kei May Lau
• 刊名：ACS Photonics
• 出版年：2017
• 出版时间：February 15, 2017
• 年：2017
• 卷：4
• 期：2
• 页码：204-210
• 全文大小：599K
• ISSN：2330-4022

文摘

Monolithic integration of high-performance semiconductor lasers on silicon enables wafer-scale optical interconnects within photonic integrated circuits on a silicon manufacturing platform. III–V quantum dot (QD) lasers on silicon stand out for their better device performances and reliability. QD lasers grown on III–V substrates have been integrated by wafer-bonding techniques with high quality. Direct growth of QD lasers on silicon offers an alluring alternative, using widely available large-area silicon substrates. However, to date, notable achievements have been reported only in InAs/GaAs lasers emitting at 1.3 μm, while 1.55 μm InAs/InP QD lasers on silicon remain in uncharted territory. Here we demonstrate the first 1.55 μm band InAs/InAlGaAs quantum dot microdisk lasers epitaxially grown on (001) silicon substrates. The lasing threshold for the seven-layer quantum dot microdisk laser at liquid-helium temperature is 1.6 mW under continuous optical pumping. The observed lasing is attributed to a unique combination of the high-quality QDs, small mode volume, and smooth sidewall of the microdisk structure and a well-developed InP buffer incorporating quantum dots as dislocation filters. These results thus mark a major step toward an integrated III–V-on-silicon photonics platform.