High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth

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• 作者：Xin Miao ; Kelson Chabak ; Chen Zhang ; Parsian K. Mohseni ; Dennis Walker ; Jr. ; Xiuling Li
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：May 13, 2015
• 年：2015
• 卷：15
• 期：5
• 页码：2780-2786
• 全文大小：409K
• ISSN：1530-6992

文摘

<title> High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth - Nano Letters (ACS Publications) title> the substrate. For a planar GaAs NW array-based HEMT with 150 nm gate length and 2 V drain bias, the on/off ratio (ION/IOFF), cutoff frequency (fT), and maximum oscillation frequency (fmax) are 104, 33, and 75 GHz, respectively. By characterizing more than 100 devices on a 1.5 脳 1.5 cm2 chip, we prove chip-level electrical uniformity of the planar NW array-based HEMTs and verify the feasibility of using this bottom-up planar NW technology for post-Si large-scale nanoelectronics." /> class="journal article pod">