Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors

详细信息    查看全文

• 作者：Zelei Guo ; Rui Dong ; Partha Sarathi Chakraborty ; Nelson Lourenco ; James Palmer ; Yike Hu ; Ming Ruan ; John Hankinson ; Jan Kunc ; John D. Cressler ; Claire Berger ; Walt A. de Heer
• 刊名：Nano Letters
• 出版年：2013
• 出版时间：March 13, 2013
• 年：2013
• 卷：13
• 期：3
• 页码：942-947
• 全文大小：318K
• 年卷期：v.13,no.3(March 13, 2013)
• ISSN：1530-6992

文摘

The maximum oscillation frequency (f_max) quantifies the practical upper bound for useful circuit operation. We report here an f_max of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high-frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high 魏 dielectric T-gate and self-aligned contacts further contributed to the record-breaking f_max.

Keywords:

Epitaxial graphene; silicon carbide; field effect transistors; high frequency electronics; nanoelectronics; maximum oscillation frequency