Performance Enhancement of ZITO Thin-Film Transistors via Graphene Bridge Layer by Sol鈥揋el Combustion Process

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• 作者：Jianhua Zhang ; Panpan Dong ; Yana Gao ; Chenhang Sheng ; Xifeng Li
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：November 4, 2015
• 年：2015
• 卷：7
• 期：43
• 页码：24103-24109
• 全文大小：543K
• ISSN：1944-8252

文摘

In this article, we reported the stacked structure zinc鈥搃ndium-tin oxide (ZITO) thin-film transistors (TFTs) with graphene nanosheets (GNSs) prepared by solution process. GNSs were used as bridge layer between dual-ZITO layers. The transmission of stacked ZITO/GNSs/ZITO films are more than 80% in the visible region and the resistivity of ZITO films with GNSs bridge layer decreased from 502.9 to 13.4 惟 cm. The solution-processed TFT devices with GNSs bridge layer exhibited a desirable characteristic with a subthreshold slope of 0.25 V/dec and current on鈥搊ff ratio of 1 脳 10⁷, and the saturation filed effect mobility is improved to 45.9 cm²V^鈥?s^鈥?, which exceeds the mobility values of the pristine ZITO TFTs by one order. These results demonstrate the solution-processed ZITO/GNSs/ZITO TFTs maybe make a further step to achieve high-performance TFTs and show the potential for next-generation applications.