Electrical Modification of ZnO Nanodevices by a Pulsed-Laser Deposited Al2O3 Film

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• 作者：Jianye Li ; D. Bruce Buchholz ; Ming Zhang ; Robert P. H. Chang
• 刊名：Journal of Physical Chemistry C
• 出版年：2008
• 出版时间：December 11, 2008
• 年：2008
• 卷：112
• 期：49
• 页码：19686-19689
• 全文大小：226K
• 年卷期：v.112,no.49(December 11, 2008)
• ISSN：1932-7455

文摘

Modification of the electrical properties of individual single-crystalline ZnO nanowire devices by a pulsed-laser deposition of a thin insulating Al₂O₃ layer is reported. Through the reduction of O₂⁻ ion concentration on the nanowire surface by the Al₂O₃ layer, the electron concentration in the nanowire is increased and, as a result, the current of the nanodevice enhanced. The degree to which the conductivity of the device increased is related to the ratio of Zn to O in the nanowire, and the ratio in turn is related to the growth temperature of the ZnO nanowires. The percentage change in electrical behavior of the nanodevice fabricated from ZnO nanowires grown in a lower temperature zone with a greater Zn to O ratio was less.