Synthesis of ZnO nanostructures by spontaneous oxidation of Zn films on p-type silicon substrates

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• 作者：Qiang Xu ; Qijin Cheng ; Zifeng Zhang ; Rongdun Hong ; Xiaping Chen ; Zhengyun Wu ; Fengyan Zhang
• 关键词：Spontaneous oxidation ; ZnO nanostructures ; Band-gap emission ; Heterojunction ; Photodetector
• 刊名：Journal of Alloys and Compounds
• 出版年：25 March, 2014
• 年：2014
• 卷：590
• 期：Complete
• 页码：260-265
• 全文大小：1458 K

文摘

ZnO nanostructures have been synthesized on p-type silicon substrates using a two-step, spontaneous oxidation of Zn films method at room temperature. The samples both with and without a thin layer of gold in different positions have been spontaneously oxidized in a humid atmosphere for seven days to form nanosheets and ball-cactus like nanostructures. Diverse morphologies of hierarchical ZnO nanostructures have been obtained by annealing the samples at 700 掳C in a nitrogen atmosphere for 1 h. A growth mechanism has been proposed for the formation of different ZnO nanostructures. It was found that the band-gap emission can be greatly improved and that the defect emission is suppressed to a noise level when a thin layer of Au was deposited between the Zn and the Si substrate. Moreover, our results show that the ZnO/p-Si heterojunction exhibits good performance for visible spectrum detection.