Amazing diffusion depth of ultra-thin hafnium oxide film grown on n-type silicon by lower temperature atomic layer deposition
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- 作者：Qihai Lua ; b ; c ; Rong Huangb ; Xiaoling Lanb ; Xiaowei Chib ; Chao Lub ; Cheng Lib ; lich@xmu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Zhiguo Wua ; zgwu@lzu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Jun Lib ; Genliang Hanc ; Pengxun Yana ; c
- 关键词：HfO2 ; Hafnium silicide ; Hafnium silicate ; Diffusion depth ; Tunnel contact
- 刊名：Materials Letters
- 出版年：2016
- 出版时间：15 April 2016
- 年：2016
- 卷：169
- 期：Complete
- 页码：164-167
- 全文大小：1687 K
文摘
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Hf and O of HfO2 films spread into silicon forming silicates and further silicides.
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An empirical formula was deduced to calculate the diffusion depth of Hf into Si to about 33 nm.
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The NiFe/HfO2/Si contact resistance was mutational by setting 1.5 nm as a watershed.