Microstructure evolution in pulsed laser deposited epitaxial Ge-Sb-Te chalcogenide thin films
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- 作者：Ulrich Ross ; Andriy Lotnyk ; andriy.lotnyk@iom-leipzig.de" class="auth_mail" title="E-mail the corresponding author ; Erik Thelander ; Bernd Rauschenbach
- 关键词：Thin films ; Data storage materials ; Vapor deposition ; Atomic scale structure ; Transmission electron microscopy ; TEM
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：15 August 2016
- 年：2016
- 卷：676
- 期：Complete
- 页码：582-590
- 全文大小：2879 K
文摘
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Atomic-resolution Cs-corrected STEM imaging of PLD deposited Ge-Sb-Te thin films.
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Changing of overall composition with increasing deposition temperature.
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Direct imaging of surface passivation Sb/Te layer at the Ge-Sb-Te/Si(111) interface.
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The Sb/Te passivation layer is not a prerequisite for highly oriented growth of Ge-Sb-Te thin films.