Solution-processed near-infrared polymer photodetectors with an inverted device structure

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• 作者：Xilan Liu ; Hangxing Wang ; Tingbin Yang ; Wei Zhang ; I-Fan Hsieh ; Stephen Z.D. Cheng ; Xiong Gong ; ^{xgong@uakron.edu}
• 关键词：Semiconductiong polymer ; Photodetectors ; Inverted device structure ; Infrared spectral response
• 刊名：Organic Electronics
• 出版年：2012
• 出版时间：December, 2012
• 年：2012
• 卷：13
• 期：12
• 页码：2929-2934
• 全文大小：835 K

文摘

Solution-processed near-infrared polymer photodetectors with an inverted device structure were designed and fabricated. By introducing ZnO_x and MoO₃ as an electron extraction layer and a hole extraction layer, respectively, the asymmetric characteristics of the inverted polymer photodetectors was constructed. Operating at room temperature, the inverted polymer photodetectors exhibited the detectivity over 10¹² cm Hz^1/2/W from 400 to 850 nm, resulting from the enhanced photocurrent and reduced dark current induced by fabricating photoactive layer from solution with processing additive 1,8-diiodooctane. These device performances were comparable to those of inorganic counterparts.