Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates

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• 作者：Matteo Bosi ; Giovanni Attolini ; Marco Negri ; Cesare Frigeri ; Elisa Buffagni ; Claudio Ferrari ; Tiziano Rimoldi ; Luigi Cristofolini ; Lucrezia Aversa ; Roberta Tatti ; Roberto Verucchi
• 关键词：A1. Atomic force microscopy ; A1. Characterization ; A1. X-ray diffraction ; A3. Chemical vapor deposition processes ; A3. Hot wall epitaxy ; B2. Semiconducting silicon compounds
• 刊名：Journal of Crystal Growth
• 出版年：2013
• 出版时间：15 November, 2013
• 年：2013
• 卷：383
• 期：Complete
• 页码：84-94
• 全文大小：4937 K

文摘

A procedure for the optimization of a 3C-SiC buffer layer for the deposition of 3C-SiC/(001) Si is described. After a standard carbonization at 1125 ¡ãC, SiH₄ and C₃H₈ were added to the gas phase while the temperature was raised from 1125 ¡ãC to the growth temperature of 1380 ¡ãC with a controlled temperature ramp to grow a thin SiC layer. The quality and the crystallinity of the buffer layer and the presence of voids at the SiC/Si interface are related to the gas flow and to the heating ramp rate. In order to improve the buffer quality the SiH₄ and C₃H₈ flows were changed during the heating ramp. On the optimized buffer no voids were detected and a high-quality 1.5 ¦Ìm 3C-SiC was grown to demonstrate the effectiveness of the described buffer.