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Effects of annealing pressure and Ar+ sputtering cleaning on Al-doped ZnO films
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文摘

First, it reveals the main decreasing of resistivity of AZO films occurs in a very narrow range of middle vacuum, and high vacuum is dispensable. Second, it is a breakthrough that Ar+ sputtering cleaning can further decrease the resistivity of AZO films, meanwhile fulfil the surface texture process, which is very useful for photovoltaic applications. Thirdly, it demonstrates that more Zn2+ ions are replaced by Al3+, lattice oxygen decreases while oxygen vacancy increases greatly in middle vacuum, and thus conductivity of AZO films are improved significantly; Finally, it provides a very promising design for post-treatment equipment, where vacuum annealing, further optimization, surface texture can be carried out in an exactly controllable and low cost way.

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