Investigation of the energy spectra and the electron-hole alignment of the InAs/GaAs quantum dots with an ultrathin cap layer
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- 作者：Alexey P. Gorshkova ; Natalia S. Volkovab ; c ; Leonid A. Istominb ; Anton V. Zdoroveishevc ; Sergey Levichevb ; slevichev@hotmail.com" class="auth_mail" title="E-mail the corresponding author
- 关键词：A. Semiconductors ; B. Nanofabrications ; D. Electronic states (localized) ; D. Photoconductivity and photovoltaics
- 刊名：Solid State Communications
- 出版年：2016
- 出版时间：August 2016
- 年：2016
- 卷：240
- 期：Complete
- 页码：20-23
- 全文大小：477 K
文摘
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Stark effect studies on the InAs/GaAs quantum dots with ultrathin cap layers.
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Strong influence of the cap layer parameters on energy spectra and dipole moment.
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InGaAs strain reducing layer shifts the hole׳s wave function to the top of QDs.
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The sign of the ODs dipole moment changes in structures with cap layer <5 nm.
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