Unintentional gallium incorporation in InGaN layers during epitaxial growth

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• 作者：Kun Zhou^a ; ^{zhoukun2011@sinano.ac.cn} ; Huaijin Ren^a ; Masao Ikeda^b ; Jianping Liu^b ; Yi Ma^a ; Songxin Gao^a ; Chun Tang^a ; Deyao Li^b ; Liquan Zhang^b ; Hui Yang^b
• 关键词：Unintentional incorporation ; Metalorganic vapor phase epitaxy ; InGaN ; Growth rate ; Surface morphology
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：323-328
• 全文大小：1545 K
• 卷排序：101

文摘

Unintentional gallium incorporation was observed and investigated in the epitaxial growth of InGaN. The gallium incorporation rate was significantly influenced by temperature and TMIn source flow. The source of the unintentional gallium incorporation is confirmed to be from the flow distributor of the reactor. The gallium originates from transmetalation reaction between indium precursors and residual gallium. The unintentional gallium incorporation influences the growth of InGaN layers.