The transport properties of the Phosphorus and Chlorine doped single layer MoS2 p-n junctions: A first-principles study
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- 作者：Qingyi Zenga ; Jiangling Pana ; panjl@csu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Zhixiong Yangb ; Shenglin Pengb ; Hui Zoua ; Fangping Ouyanga ; b ; c ; ouyangfp06@tsinghua.org.cn" class="auth_mail" title="E-mail the corresponding author
- 刊名：Solid State Communications
- 出版年：2016
- 出版时间：November 2016
- 年：2016
- 卷：246
- 期：Complete
- 页码：82-87
- 全文大小：3173 K
文摘
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The p–n junctions exhibit obvious diode-like behavior under positive bias.
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When the bias ranges from 0.2 V to 1.3 V, the p–n junctions show good rectification performance.
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The current is related to the coupling of energy bands for both electrodes.
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High rectification ratio is originated from the delocalization effect of the frontier orbits.