Buffer effects of two functional groups against pH variation at aminosilanized Electrolyte-Oxide-Semiconductor (EOS) capacitor

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• 作者：Nanki Hong^aAuthor Vitae ; ChanOh Park^bAuthor Vitae ; Donghoon Kim^aAuthor Vitae ; Ki-Soo Jeong^aAuthor Vitae ; Jun-Sik Yoon^cAuthor Vitae ; Bo Jin^aAuthor Vitae ; M. Meyyappan^dAuthor Vitae ; Jeong-Soo Lee^a ; ^b ; ^{ljs6951@postech.ac.kr}Author Vitae
• 关键词：pH sensitivity ; Silanization ; Electrolyte-Oxide-Semiconductor capacitor ; Buffer effect
• 刊名：Sensors and Actuators B: Chemical
• 出版年：2017
• 出版时间：April 2017
• 年：2017
• 卷：242
• 期：Complete
• 页码：324-331
• 全文大小：1867 K
• 卷排序：242

文摘

pH sensitivity variations of Electrolyte-Oxide-Semiconductor capacitor with both silanol and amine groups are analyzed in terms of their functional group ratio theoretically and experimentally. The phenomena causing the pH sensitivity variations are explained by the buffer effect of each functional group by using Henderson-Hasselbalch equation. The influence of O2 plasma and solvent on silanized structure and density are analyzed by X-ray photoelectron spectroscopy measurements.