Growth of high quality N-polar n-GaN on vicinal C-face n-SiC substrates for vertical conducting devices
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- 作者：Gaoqiang Deng ; Yuantao Zhang ; zhangyt@jlu.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Zhen Huang ; Baozhu Li ; Baolin Zhang ; Guotong Du
- 关键词：N-polar GaN ; Metalorganic chemical vapor deposition ; Vertical conducting ; Nitrides
- 刊名：Vacuum
- 出版年：2016
- 出版时间：August 2016
- 年：2016
- 卷：130
- 期：Complete
- 页码：119-123
- 全文大小：1551 K
文摘
- •
The full width at half maximum of N-polar GaN
ω-rocking curve is ∼335 arcsec.- •
SiNx interlayer is an effective way to improve the properties of N-polar GaN films.
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Our structure is vertical conducting.