Phosphorus diffusion in germanium following implantation and excimer laser annealing

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• 作者：Chen Wang ; Cheng Li ; ^{lich@xmu.edu.cn" class="auth_mail} ; Shihao Huang ; Weifang Lu ; Guangming Yan ; Maotian Zhang ; Huanda Wu ; Guangyang Lin ; Jiangbin Wei ; Wei Huang ; Hongkai Lai ; Songyan Chen
• 关键词：Excimer laser annealing (ELA) ; Phosphorous implantation ; Diffusion model ; Germanium ; Junction
• 刊名：Applied Surface Science
• 出版年：1 May, 2014
• 年：2014
• 卷：300
• 期：Complete
• 页码：208-212
• 全文大小：1526 K

文摘

We focus our study on phosphorus diffusion in ion-implanted germanium after excimer laser annealing (ELA). An analytical model of laser annealing process is developed to predict the temperature profile and the melted depth in Ge. Based on the heat calculation of ELA, a phosphorus diffusion model has been proposed to predict the dopant profiles in Ge after ELA and fit SIMS profiles perfectly. A comparison between the current-voltage characteristics of Ge n⁺/p junctions formed by ELA at 250 mJ/cm² and rapid thermal annealing at 650 掳C for 15 s has been made, suggesting that ELA is promising for high performance Ge n⁺/p junctions.