文摘
High quality CZTS thin films grown by means of PLD technique without resorting to any post sulfurization process. Effect of thermal annealing treatments (in the 200–500 °C range) on the structural, morphological and optoelectronic properties of PLD-CZTS films. Experimental determination of key optoelectronic parameters (i.e.; Eg, VBM, ϕ, Ip, and χ) enabling the reconstruction of energy band electronic structure of the PLD-CZTS films. Investigation on the energy band alignments of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials.