Polarization reversal and memory effect in anti-ferroelectric materials

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• 作者：Melvin M. Vopson^a ; ¹ ; ^{melvin.vopson@port.ac.uk" class="auth_mail" title="E-mail the corresponding author} ; G. Caruntu^b ; Xiaoli Tan^c
• 关键词：Anti-ferroelectric memory ; Antiphase domains ; Ferroelectricity ; Ferroelectric materials ; Electroceramics
• 刊名：Scripta Materialia
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：128
• 期：Complete
• 页码：61-64
• 全文大小：997 K

文摘

A solid-state memory effect is defined as the ability of a material to store information, and it requires at least two switchable memory states that can be addressed by an externally controlled parameter. In this article we present experimental evidence of a memory effect in anti-ferroelectric Pb_0.99Nb_0.02[(Zr_0.57Sn_0.43)_0.94Ti_0.06]_0.98O₃ polycrystalline ceramic materials. This study indicates that anti-ferroelectrics encode data in their ferroelectric sublattices, resulting in a 4-state memory capable of storing 2 digital bits simultaneously. This result opens up the possibility of realizing non-volatile anti-ferroelectric random access memory, as well as other possible devices and logic applications based on anti-ferroelectric materials.