Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS₂ films grown by pulsed laser deposition

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• 作者：&Scaron ; . Chromik^a ; M. Sojková ; ^a ; ^{michaela.sojkova@savba.sk} ; V. Vretená ; r^b ; A. Rosová ; ^a ; E. Dobročka^a ; M. Hulman^a
• 关键词：MoS2 ; Pulsed laser deposition ; Stoichiometric target ; GaN/AlGaN/GaN (0001) ; Si (100) ; Raman spectroscopy ; TEM analyses ; AES analyses
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：395
• 期：Complete
• 页码：232-236
• 全文大小：1627 K
• 卷排序：395

文摘

Observation of the epitaxial growth of the MoS2 film on the GaN/AlGaN/GaN (0001) substrate and c-axis oriented nanocrystalline MoS2 film on the Si (100) substrate. Dependence of the Raman peak position on the crystal structure of MoS2 film. Non-linear thickness dependence on the number of laser pulses using PLD from the stoichiometric target.